EUV lithography (EUVL) PPT and PDF Report
EUV lithography (EUVL) PPT and PDF Report: EUV lithography (EUVL) is one of the cardinal NGL technologies; others include x-ray lithography, ion-beam projection lithography, and electron-beam projection lithography.
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EUV lithography (EUVL) Seminar and PPT with PDF Report
- Microprocessors made by euvl are up to to 100 times faster than today’s most powerful chips
- Decrease in size of chip but the speed increases.
- EUVL technology attains good profundity of focus and linearity for both dense and isolated lines with low NA.
- Increase in storage capacity.
- The low thermal expansion substrates provide good image placement.
- Positive charging, due to ejection of photoelectrons
- Contamination deposition on the resist from out gassed haydrocarbons, which results from EUV- or electron-driven reactions.
- No known method for repairing defects in a ML coating.
- Entire process has to be carried out in vacuum.
- Mirrors used are only 70% reflective.
- EUVL will open a new segment in semiconductor technology.
- Successful implementation of EUVL would enable projection lithography to remain semiconductor industry’s pattern technology of choice for years to come.
- Much work is to be done in order to regulate whether EUVL is ready for huge scale production.
Content of the Seminar and pdf report for EUV lithography (EUVL)
- Introduction to EUVL
- Basic concepts
- Why do we need EUVL?
- EUVL Process
- Basic technology for EUV
- EUV masks
- All Reflective Optics
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